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VESTEL R&D Hardware Requirement Specification
11AK56
ABSOLUTE MAXIMUMRATINGS
2.2.2.6.1.2.
MOSFET
The MTP3N60E used for voltage range 170-270V, The MTP6N60E used for voltage range 90 � 270V. 2.2.2.6.1.2.1. MTP3N60E
N�Channel Enhancement�Mode Silicon Gate This advanced high voltage TMOS E�FET is designed to with stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain�to� source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
© Copyright 2003 VESTEL Group of Company
Avalanche Energy Capability Specified at Elevated Temperature Low Stored Gate Charge for Efficient Switching Internal Source�to�Drain Diode Designed to Replace External Zener Transient Suppressor � Absorbs High Energy in the Avalanche Mode Source�to�Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
All rights reserved. Passing on copying this document, use and communication of its contents not permitted without written permission from VESTEL
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